Negative-differential-resistance characteristics in a triangular-barrier resonant tunnelling switch
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Experimental demonstration of single peak IV characteristics in a novel resonant tunneling diode
2. Resonant-Tunneling Bipolar Transistors with a Quantum-Well Base
3. Optical switching mechanism based on charge accumulation effects in resonant tunneling diodes
4. Resonant tunneling in semiconductor double barriers
5. Picosecond-switching time of In/sub 0.53/Ga/sub 0.47/As/AlAs resonant-tunneling diodes measured by electro-optic sampling technique
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Tunneling Processes in a Triangular Multibarrier Semiconductor Heterostructure;IEEE Transactions on Electron Devices;2011-03
2. Investigation of InP/InGaAs superlattice-emitter bipolar transistor with multiple negative-differential-resistance regions;Materials Chemistry and Physics;2006-12
3. A theoretical study of resonant tunneling characteristics in triangular double-barrier diodes;Physics Letters A;2006-07
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