Annealing and deposition temperature dependence of the bandgap of amorphous FeSi2fabricated by co-sputter deposition-Reference-Cited by-同舟云学术

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Annealing and deposition temperature dependence of the bandgap of amorphous FeSi2fabricated by co-sputter deposition

Published:2008-01-31 Issue:3 Volume:23 Page:035007
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Wong L,Milosavljević M,Lourenço M A,Shao G,Valizadeh R,Colligon J S,Homewood K P

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Amorphous-iron disilicide: A promising semiconductor

2. Determination of the absorption edge of a thin film from transmission measurements

3. The optical band gap of semiconducting iron disilicide thin films

4. Synthesis of amorphous FeSi2 by ion beam mixing

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1. A history of vacuum technology from 5th Century BC and a personal view of progress in the field, including medical applications, from 1959 to 2021;Vacuum;2022-04

2. Semiconducting beta-phase FeSi2 for light emitting diode applications: Recent developments, challenges, and solutions;Thin Solid Films;2013-06

3. On the effect of Au2+ion irradiation in an amorphous Fe–Si thin layer synthesized by ion implantation: a high resolution X-ray diffraction study;CrystEngComm;2013

4. Fabrication of a ZnO:Al/Amorphous-FeSi 2 Heterojunction at Room Temperature;Chinese Physics Letters;2011-10

5. Correlation of Structural and Optical Properties of Sputtered FeSi2Thin Films;Japanese Journal of Applied Physics;2010-08-20

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