On the effect of Au2+ion irradiation in an amorphous Fe–Si thin layer synthesized by ion implantation: a high resolution X-ray diffraction study-Reference-Cited by-同舟云学术

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On the effect of Au2+ion irradiation in an amorphous Fe–Si thin layer synthesized by ion implantation: a high resolution X-ray diffraction study

Published:2013 Issue:12 Volume:15 Page:2251-2259
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

de Menezes Alan S.,Calligaris Guilherme A.,Lang Rossano,Santos Adenilson O. dos,Cardoso Lisandro P.

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2013/CE/C2CE26478A

Reference44 articles.

1. V. E. Borisenko , Semiconducting Silicides, Springer, New York, 2000

2. Electronic Properties of Semiconducting Silicides

3. Silicide thin films and their applications in microelectronics

4. Materials aspects of ion beam synthesis of epitaxial suicides

5. Characterization of near-infrared n-type β-FeSi2/p-type Si heterojunction photodiodes at room temperature

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hybrid reflections from multiple x-ray scattering in epitaxial oxide films;Applied Physics Letters;2017-09-25

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