Optical spectroscopy and modelling of double-cap grown InAs/InP quantum dots with long wavelength emission-Reference-Cited by-同舟云学术

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Optical spectroscopy and modelling of double-cap grown InAs/InP quantum dots with long wavelength emission

Published:2002-09-19 Issue:10 Volume:17 Page:L63-L67
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Miska P,Paranthoen C,Even J,Dehaese O,Folliot H,Bertru N,Loualiche S,Senes M,Marie X

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Efficient Carrier Relaxation Mechanism in InGaAs/GaAs Self-Assembled Quantum Dots Based on the Existence of Continuum States

2. Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasers

3. High-performance GaInAs/GaAs quantum-dot lasers based on a single active layer

4. Bias-controlled wavelength switching in coupled-cavity In0.4Ga0.6As/GaAs self-organized quantum dot lasers

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1. The Effect of Cavity Length on Two-State Quantum Dot Laser Performance;2022 30th International Conference on Electrical Engineering (ICEE);2022-05-17

2. Gain-switched short pulse generation from InAs-InP (1 1 3)B quantum dot laser excited state;Optics & Laser Technology;2022-04

3. Gain-switched pulses from quantum-dot laser excited state;Semiconductor Lasers and Applications XI;2021-10-09

4. Encapsulation study of MOVPE grown InAs QDs by InP towards 1550 nm emission;Journal of Crystal Growth;2021-03

5. Numerical modelling of electronic and optical properties of isolated and self-assembled InAs/InP quantum dots;Optik;2019-04

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