Comparative study of double ion implant Ti salicide and pre-amorphization implant Co salicide for ultra-large-scale integration applications-Reference-Cited by-同舟云学术

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Comparative study of double ion implant Ti salicide and pre-amorphization implant Co salicide for ultra-large-scale integration applications

Published:2002-09-04 Issue:10 Volume:17 Page:1075-1080
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Chuang Hung-Ming,Thei Kong-Beng,Tsai Sheng-Fu,Lu Chun-Tsen,Liao Xin-Da,Lee Kuan-Ming,Liu Wen-Chau

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Development of the self-aligned titanium silicide process for VLSI applications

2. Characteristics of titanium silicide formed by Si/Mo/Ti trilayer metallisation

3. A high-performance 0.25- mu m CMOS technology. II. Technology

4. Low-resistance self-aligned Ti-silicide technology for sub-quarter micron CMOS devices

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Wireless biomechanical power harvesting via flexible magnetostrictive ribbons;Energy & Environmental Science;2014

2. Impact of an As implant before CoSi2 formation on the sheet resistance and junction breakdown voltage;Microelectronic Engineering;2006-11

3. A comprehensive study of polysilicon resistors for CMOS ULSI applications;Superlattices and Microstructures;2003-04

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