Epitaxial GaNxAs1-xlayer formed by pulsed-laser irradiation of GaAs in an ambient nitrogen gas
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron
2. Growth of GaAsN alloys by low‐pressure metalorganic chemical vapor deposition using plasma‐cracked NH3
3. Gas-Source Molecular Beam Epitaxy of $\bf GaN_{\ninmbi x}As_{1-{\ninmbi x}}$ Using a N Radical as the N Source
4. Bowing parameter of the band-gap energy of GaNxAs1−x
5. Pulsed laser deposition of epitaxial GaNxAs1−x on GaAs
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1. Understanding and reducing deleterious defects in the metastable alloy GaAsBi;NPG Asia Materials;2017-01
2. Ion beam synthesis and n-type doping of group III Nx V1 xalloys;Semiconductor Science and Technology;2002-07-09
3. Energetic Beam Synthesis of Dilute Nitrides and Related Alloys;Dilute III-V Nitride Semiconductors and Material Systems
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