Near band-gap photoluminescence of the MOCVD-grown heavily Si-doped GaAs
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/4/i=11/a=006/pdf
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1. Heavily doped semiconductors and devices
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4. Optical Properties of n‐Type GaAs. II. Formation of Efficient Hole Traps during Annealing in Te‐Doped GaAs
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