Photoreflectance of InxGa1-xAs/GaAs strained-layer superlattices
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/4/i=10/a=007/pdf
Reference27 articles.
1. Optical studies of InxGa1−xAs‐GaAs strained multiquantum well structures
2. Defect reduction in GaAs epitaxial layers using a GaAsP‐InGaAs strained‐layer superlattice
3. Excitonic energies and inhomogeneous line broadening effects in InAlAs/InGaAs modulator structures
4. Large valence-band offset in strained-layerInxGa1−xAs-GaAs quantum wells
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2. Photoreflectance spectroscopy study of a strained-layer CdTe/ZnTe superlattice;Journal of Applied Physics;2011-11
3. Dots-in-a-well ingaas based laser probed by photoreflectance-anisotropy spectroscopy;2009 III Conference of University of Guanajuato IEEE Students Chapter (IEEExPO);2009-11
4. Material parameters of InGaAsP and InAlGaAs systems for use in quantum well structures at low and room temperatures;Physica E: Low-dimensional Systems and Nanostructures;2000-03
5. Effects of rapid thermal annealing on the optical properties of GaNxAs1−x/GaAs single quantum well structure grown by molecular beam epitaxy;Journal of Applied Physics;2000-01
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