Growth and characterization of calcium fluoride on (100) and (111) silicon substrates
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/7/i=11/a=005/pdf
Reference24 articles.
1. An epitaxial Si/insulator/Si structure prepared by vacuum deposition of CaF2 and silicon
2. Flattening the Surface of CaF2/Si(100) Structures by Post-Growth Annealing
3. Evidence for the influence of interfacial atomic structure on electrical properties at the epitaxialCaF2/Si(111) interface
4. MIS characterization and modeling of the electrical properties of the epitaxial Caf2/Si(111) interface
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Calcium fluoride as high-k dielectric for 2D electronics;Applied Physics Reviews;2021-06
2. Quasi‐one‐dimensional CaF2 islands formed on Si(001) by molecular beam epitaxy;Applied Physics Letters;1996-04-22
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