Effects of the n+etching process in TFT-LCD fabrication for Mo/Al/Mo data lines
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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4. Interface diffusion characteristics of Al–2at.%Nd/n+a-Si:H and Al–2at.%Nd/n+poly-Si bilayers;Thin Solid Films;2012-01
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