Exploration of the inherent magnetoresistance in InSb thin films-Reference-Cited by-同舟云学术

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Exploration of the inherent magnetoresistance in InSb thin films

Published:2006-09-25 Issue:12 Volume:21 Page:1543-1546
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Zhang Tong,Harris J J,Branford W R,Clowes S K,Cohen L F,Solin S A

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Narrow-gap semiconductor magnetic-field sensors and applications

2. Enhanced Room-Temperature Geometric Magnetoresistance in Inhomogeneous Narrow-Gap Semiconductors

3. Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording

4. InSb epilayers on GaAs(100) for spintronic and magneto-resistive sensor applications

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Synchrotron Radiation X-Ray Absorption Spectroscopy and Spectroscopic Ellipsometry Studies of InSb Thin Films on GaAs Grown by Metalorganic Chemical Vapor Deposition;Advances in Materials Science and Engineering;2018-07-08

2. Magnetoresistance of electrochemically produced InSb;Materials Research Innovations;2016-05-06

3. Electrochemically deposited nanocrystalline InSb thin films and their electrical properties;Journal of Materials Chemistry C;2016

4. Peculiarities of magnetoresistance in InSb whiskers at cryogenic temperatures;Materials Research Bulletin;2015-12

5. Suppression of the parasitic buffer layer conductance in InSb/AlxIn1−xSb heterostructures using a wide-band-gap barrier layer;Physical Review B;2011-08-12

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