Monte Carlo simulation of impact ionization and current multiplication in short GaAs diodes-Reference-Cited by-同舟云学术

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Monte Carlo simulation of impact ionization and current multiplication in short GaAs diodes

Published:1997-01-01 Issue:1 Volume:12 Page:111-120
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Dunn G M,Rees G J,David J P R,Plimmer S A,Herbert D C

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference39 articles.

1. Current transport in narrow-base transistors

2. An investigation of steady-state velocity overshoot in silicon

3. Soft-threshold lucky drift theory of impact ionisation in semiconductors

4. "Soft" energy thresholds in impact ionization: A classical model

5. Breakdown voltage in ultra-thin pin diodes

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4. Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode;Journal of Applied Physics;2014-03-21

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