Molecular beam epitaxy and characterization of heterostructures for magnetic sensing applications-Reference-Cited by-同舟云学术

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Molecular beam epitaxy and characterization of heterostructures for magnetic sensing applications

Published:1998-04-01 Issue:4 Volume:13 Page:428-432
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Behet M,Nemeth S,Boeck J De,Borghs G,Tümmler J,Woitok J,Geurts J

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Interband tunneling in polytype GaSb/AlSb/InAs heterostructures

2. Growth and characterization of high current density, high‐speed InAs/AlSb resonant tunneling diodes

3. InAs/AlSb dual-gate HFETs

4. Complementary InAs n-Channel and GaSb p-Channel Quantum Well Heterojunction Field-Effect Transistors

5. InAs deep quantum well structures and their application to Hall elements

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1. Transport in Nb-InAs structures: from phase coherence to the edge state regime;Applied Physics A;2007-07-24

2. Antimonide-based compound semiconductors for electronic devices: A review;Solid-State Electronics;2005-12

3. Andreev Reflection at High Magnetic Fields: Evidence for Electron and Hole Transport in Edge States;Physical Review Letters;2005-08-31

4. Magneto-gyrotropic photogalvanic effects in semiconductor quantum wells;Journal of Physics: Condensed Matter;2005-05-13

5. Spin photocurrents in quantum wells;Journal of Physics: Condensed Matter;2003-05-09

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