P-on-n arsenic-activated junctions in MOCVD LWIR HgCdTe/GaAs-Reference-Cited by-同舟云学术

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P-on-n arsenic-activated junctions in MOCVD LWIR HgCdTe/GaAs

Published:1990-03-01 Issue:3S Volume:5 Page:S45-S48
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Bubulac L O,Edwall D D,McConnell D,DeWames R E,Blazejewski E R,Gertner E R

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/5/i=3S/a=011/pdf

Reference6 articles.

1. Recent developments in the pyrolytic and photolytic deposition of (Cd,Hg)Te and related II–VI materials

2. The growth of highly uniform cadmium mercury telluride by a new MOVPE technique

3. A new MOVPE technique for the growth of highly uniform CMT

4. MOCVD Hg1-xCdxTe/GaAs for IR detectors

5. Scanning tunneling microscopy on photoconductive semi‐insulating GaAs

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1. CdTe/Si Composite Substrate and HgCdTe Epitaxy;Technology for Advanced Focal Plane Arrays of HgCdTe and AlGaN;2016

2. Substrates for the Epitaxial Growth of MCT;Mercury Cadmium Telluride;2010-09-04

3. Heterostructure HgCdTe photovoltaic detectors;SPIE Proceedings;2001-02-22

4. Heterostructure infrared photovoltaic detectors;Infrared Physics & Technology;2000-08

5. Heterostructure infrared photodiodes;Semiconductor Physics, Quantum Electronics and Optoelectronics;2000-03-21

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