Interband and intersubband transitions in indium arsenide doping superlattices studied by absorption, nonlinear absorption and photoconductivity spectroscopies-Reference-Cited by-同舟云学术

Interband and intersubband transitions in indium arsenide doping superlattices studied by absorption, nonlinear absorption and photoconductivity spectroscopies

Published:1993-01-01 Issue:1S Volume:8 Page:S373-S379
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Phillips C C,Johnson E A,Thomas R H,Vaghjiani H L,Ferguson I T,Norman A G

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/8/i=1S/a=084/pdf

Reference15 articles.

1. Doping superlattices based on InSb for mid‐infrared detector applications

2. NIPI superlattices in InSb: an alternative route to 10 mu m detector fabrication

3. Electrical and magneto-optical of MBE InAs on GaAs

4. Infrared reflection and transmission of undoped and Si-doped InAs grown on GaAs by molecular beam epitaxy

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1. Blueshift of intersubband magneto-optical transitions linked to void states of thin barriers in multiple quantum well structures;Physical Review B;2010-07-30

2. Photoluminescence studies of n-i-p-i superlattices in InSb and InAs: suppression of Auger recombination due to type II potentials;Semiconductor Science and Technology;1995-04-01

3. Observation of Intersubband Transitions in Asymmetric δ-Doped GaAs, InSb and InAs Structures;Quantum Well Intersubband Transition Physics and Devices;1994

4. Excitonic photoluminescence in high-purity InAs MBE epilayers on GaAs substrates;Semiconductor Science and Technology;1993-12-01

5. Band structure for small lattice constant: dependence on lattice granularity;Journal of Physics: Condensed Matter;1993-08-09