Infrared reflection and transmission of undoped and Si-doped InAs grown on GaAs by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Infrared reflection and transmission of undoped and Si-doped InAs grown on GaAs by molecular beam epitaxy

Published:1993-01-01 Issue:1 Volume:8 Page:101-111
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Li Y B,Stradling R A,Knight T,Birch J R,Thomas R H,Phillips C C,Ferguson I T

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/8/i=1/a=017/pdf

Reference38 articles.

1. The Interpretation of the Properties of Indium Antimonide

2. Anomalous Optical Absorption Limit in InSb

3. Raman scattering by plasmon-phonon modes in highly doped n-InAs grown by molecular beam epitaxy

4. Observation of spatial dispersion of surface plasmon mode in HREELS of heavily doped n-type InAs(001)

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