Optical properties of InAs quantum wells emitting between 0.9 mu m and 2.5 mu m
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/8/i=1S/a=051/pdf
Reference20 articles.
1. Band structure engineering of semiconductor lasers for optical communications
2. Optical investigations of the band structure of strained InAs/AlInAs quantum wells
3. InAs strained‐layer quantum wells with band gaps in the 1.2–1.6 μm wavelength range
4. Molecular-beam epitaxial growth and characterization of pseudomorphic InAs/In0.52Al0.48 As quantum wells
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1. Photoluminescence properties of dense InAs/AlInAs quantum wire arrays;Journal of Crystal Growth;2000-06
2. Effect of matrix on InAs self-organized quantum dots on InP substrate;Applied Physics Letters;1998-01-19
3. Arrays of strained InAs quantum dots in an (In Ga)As matrix, grown on InP substrates by molecular-beam epitaxy;Semiconductors;1997-10
4. Free-carrier absorption in n-type piezoelectric semiconductor films;Journal of Physics: Condensed Matter;1994-11-14
5. InAlAs/InP heterostructures: Influence of a thin InAs layer at the interface;Journal of Applied Physics;1994-08-15
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