The effect of carbon on neutral base recombination in high-speed SiGeC heterojunction bipolar transistors-Reference-Cited by-同舟云学术

The effect of carbon on neutral base recombination in high-speed SiGeC heterojunction bipolar transistors

Published:2006-11-30 Issue:1 Volume:22 Page:S99-S102
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Barbalat Benoît,Schwartzmann Thierry,Chevalier Pascal,Vandelle Benoît,Rubaldo Laurent,Lachater Anne,Saguin Fabienne,Zerounian Nicolas,Aniel Frédéric,Chantre Alain

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Base Current Control in Low-VBE-Operated SiGeC Heterojunction Bipolar Transistors Using SiGe-Cap Structure and High-Carbon-Content Base

2. Band-to-band tunneling in vertically scaled SiGe:C HBTs

3. Band‐edge and deep level photoluminescence of pseudomorphic Si1−x−yGexCyalloys

4. Electrical determination of bandgap narrowing in bipolar transistors with epitaxial Si, epitaxial Si/sub 1-x/Ge/sub x/, and ion implanted bases

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3. Investigation into Inhibitory Effect of C Incorporation on Diffusion of B in SiGe;IOP Conference Series: Materials Science and Engineering;2017-12

4. Substitutional C effect on generation lifetime in MBE-grown SiGeC layers;Semiconductor Science and Technology;2008-12-18