Influence of dot size distribution and interlayer thickness on the optical property of closely stacked InAs/GaAs quantum dots with growth interruption-Reference-Cited by-同舟云学术

Influence of dot size distribution and interlayer thickness on the optical property of closely stacked InAs/GaAs quantum dots with growth interruption

Published:2008-07-25 Issue:8 Volume:23 Page:085026
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Park C Y,Kim J M,Yu J S,Lee Y T

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices

2. Advanced study of various characteristics found in RHEED patterns during the growth of InAs quantum dots on GaAs (0 0 1) substrate by molecular beam epitaxy

3. Shape and surface morphology changes during the initial stages of encapsulation of InAs/GaAs quantum dots

4. Improved optical properties of InAs quantum dots grown with an As2 source using molecular beam epitaxy

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