Group IV semiconductor nanowire arrays: epitaxy in different contexts-Reference-Cited by-同舟云学术

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Group IV semiconductor nanowire arrays: epitaxy in different contexts

Published:2010-01-22 Issue:2 Volume:25 Page:024016
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

McIntyre Paul C,Adhikari Hemant,Goldthorpe Irene A,Hu Shu,Leu Paul W,Marshall Ann F,Chidsey Christopher E D

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference47 articles.

1. Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks

2. Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species

3. Growth of nanowire superlattice structures for nanoscale photonics and electronics

4. Block-by-Block Growth of Single-Crystalline Si/SiGe Superlattice Nanowires

5. Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics

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1. Spontaneous, Defect-Free Kinking via Capillary Instability during Vapor–Liquid–Solid Nanowire Growth;Nano Letters;2016-02-10

2. Direct electrochemical deposition of crystalline silicon nanowires at T ≥ 60 °C;RSC Advances;2016

3. Ge–Si and Si–Ge core–shell nanocrystals: Theoretical study;Thin Solid Films;2015-08

4. Structural examination of the interface between Au catalysts and Ge(1 1 1);Acta Materialia;2015-05

5. Impact of Surface Passivation on the Electronic Structure and Optical Properties oftheSi 1− x Ge x Nanowires;Chinese Physics Letters;2015-02

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