Characterization of -doped superlattices by Shubnikov - de Haas measurements-Reference-Cited by-同舟云学术

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Characterization of -doped superlattices by Shubnikov - de Haas measurements

Published:1996-02-01 Issue:2 Volume:11 Page:190-195
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Henriques A B,Gonçalves L C D,Souza P L de,Yavich B

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Electronic properties of multiple Si δ doping in GaAs

2. Quantum- and transport electron mobility in the individual subbands of a two-dimensional electron gas in Si-δ-doped GaAs

3. Raman scattering from electronic excitations in periodically δ-doped GaAs

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Si δ-doping superlattices in InP grown by low-pressure metalorganic vapor phase epitaxy;Radiation Effects and Defects in Solids;1998-10

2. Electronic and optical properties of periodically Si δ-doped InP grown by low pressure metalorganic vapor phase epitaxy;Journal of Applied Physics;1997-08-15

3. Ionized impurity scattering in periodically δ-doped InP;Physical Review B;1997-05-15

4. In-plane transport properties of heavily δ-doped GaAsn-i-p-isuperlattices: Metal-insulator transition, weak and strong localization;Physical Review B;1996-11-15

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