Power series approximation used in soft threshold lucky drift model of impact ionisation
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/5/i=2/a=007/pdf
Reference26 articles.
1. Lucky-drift mechanism for impact ionisation in semiconductors
2. A model for impact ionisation in wide-gap semiconductors
3. An alternative expression for the impact ionisation coefficient in a semiconductor derived using lucky drift theory
4. A test of the lucky-drift theory of the impact ionisation coefficient using Monte Carlo simulation
5. A lucky drift model, including a soft threshold energy, fitted to experimental measurements of ionization coefficients
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1. Electrical Conduction in Metals and Semiconductors;Springer Handbook of Electronic and Photonic Materials;2017
2. Electrical Conduction in Metals and Semiconductors;Springer Handbook of Electronic and Photonic Materials;2006
3. Lucky drift impact ionization in amorphous semiconductors;Journal of Applied Physics;2004-08-15
4. Lucky drift model for non-local impact ionisation incorporating a soft threshold energy;IEE Proceedings - Optoelectronics;2003-04-01
5. Gate polarity dependence of impact ionization probabilities in metal-oxide-silicon structures under Fowler–Nordheim stress;Solid-State Electronics;2002-02
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