An n-type SiGe/Ge QC structure utilizing the deep Ge quantum well for electron at the Γ point
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference27 articles.
1. Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures
2. Electroluminescence from strain-compensated Si0.2Ge0.8/Si quantum-cascade structures based on a bound-to-continuum transition
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4. Interwell intersubband electroluminescence from Si/SiGe quantum cascade emitters
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1. Material configurations forn-type silicon-based terahertz quantum cascade lasers;Physical Review B;2011-05-23
2. Microcavities and quantum cascade laser structures based on silicon–germanium (SiGe) nanostructures;Silicon–Germanium (SiGe) Nanostructures;2011
3. Quantitative strain characterization of SiGe heterostructures by high-resolution transmission electron microscopy;Physica B: Condensed Matter;2010-08
4. Si based quantum cascade structure: from energy band structures design to materials growth;physica status solidi (c);2009-03
5. SiGe nanostructures;Surface Science Reports;2009-02-28
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