Effect of fixed charges due to a passivant on the performance of the HgCdTe overlap structure
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Geometrical enhancement of HgCdTe photoconductive detectors
2. Evaluation of asymmetric overlap structure for photoconductors
3. Theory of generation‐recombination noise and responsitivity in overlap structure photoconductors
4. The mechanism of (Hg,Cd)Te anodic oxidation
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2. Investigation of the influence of graded-gap layer formed by annealing on the electrical properties of the near-surface of LPE HgCdTe using MIS structure;Materials Research Express;2021-01-01
3. Effects of different passivation layers on RV characteristics of long-wave HgCdTe gate-controlled diodes;Semiconductor Science and Technology;2020-07-24
4. Improved Passivant-induced Shunt Resistance Model for n-HgCdTe Photoconducting Infrared Detector;Defence Science Journal;2004-04-01
5. Noise modeling of shunt resistance in HgCdTe photoconductor detectors;Infrared Physics & Technology;2004-03
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