Substitutional incorporation of Sn in compressively strained thin films of heavily-alloyed Ge1 −xSnx/Ge semiconductor probed by x-ray absorption and diffraction methods-Reference-Cited by-同舟云学术

Substitutional incorporation of Sn in compressively strained thin films of heavily-alloyed Ge1 −xSnx/Ge semiconductor probed by x-ray absorption and diffraction methods

Published:2014-09-03 Issue:11 Volume:29 Page:115008
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Soo Y L,Wu T S,Chen Y C,Shiu Y F,Peng H J,Tsai Y W,Liao P Y,Zheng Y Z,Chang S L,Chan T S,Lee J F,Sterbinsky G E,Li H,Cheng H H

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/29/i=11/a=115008/pdf

Reference26 articles.

1. Silicon Germanium CMOS Optoelectronic Switching Device: Bringing Light to Latch

2. Mid-infrared electroluminescence from a Ge/Ge0.922Sn0.078/Ge double heterostructure p-i-n diode on a Si substrate

3. Intervalence‐subband transition in SiGe/Si multiple quantum wells−normal incident detection

4. Stress-induced self-organization of nanoscale structures in SiGe/Si multilayer films

5. Achieving direct band gap in germanium through integration of Sn alloying and external strain

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