Monte Carlo simulation of hot-phonon effects in a biased AlGaN/GaN channel
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Progress in High-Power, High Frequency AlGaN/GaN HEMTs
2. Hot phonon dynamics
3. Electric field induced heating of high mobility electrons in modulation‐doped GaAs‐AlGaAs heterostructures
4. Monte Carlo algorithm for hot phonons in polar semiconductors
5. Hot phonon effects in silicon field‐effect transistors
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1. Amplified spontaneous emission of phonons as a likely mechanism for density-dependent velocity saturation in GaN transistors;Applied Physics Express;2016-07-29
2. Electron density window for best frequency performance, lowest phase noise and slowest degradation of GaN heterostructure field-effect transistors;Semiconductor Science and Technology;2013-06-21
3. Ultrafast decay of hot phonons in an AlGaN/AlN/AlGaN/GaN camelback channel;Journal of Applied Physics;2011-11-15
4. Heterostructure designs for enhanced performance and reliability in GaN HFETs: camelback channels;SPIE Proceedings;2011-02-10
5. Plasmon-assisted dissipation of LO-mode heat in nitride 2DEG channels;SPIE Proceedings;2010-02-11
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