Heterostructure designs for enhanced performance and reliability in GaN HFETs: camelback channels-Reference-Cited by-同舟云学术

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Heterostructure designs for enhanced performance and reliability in GaN HFETs: camelback channels

Published:2011-02-10 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Leach J. H.,Wu M.,Morkoç H.,Ramonas M.,Matulionis A.

Publisher

SPIE

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Energy relaxation of hot electrons in III-N bulk materials;Semiconductor Science and Technology;2016-01-12

2. Effect of electron density on cutoff frequency of III-N HFETs;SPIE Proceedings;2014-03-08

3. Electron density window for best frequency performance, lowest phase noise and slowest degradation of GaN heterostructure field-effect transistors;Semiconductor Science and Technology;2013-06-21

4. Ultrafast decay of hot phonons in an AlGaN/AlN/AlGaN/GaN camelback channel;Journal of Applied Physics;2011-11-15

5. Camelback channel for fast decay of LO phonons in GaN heterostructure field-effect transistor at high electron density;Applied Physics Letters;2011-07-25

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