Optical characterization of semiconductor interfaces and envelope-function matching
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference39 articles.
1. Interface roughness from Γ and X luminescence in type II GaAs superlattices with compisition gradient
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4. Optical study of extended-molecular-layer flat islands in lattice-matchedIn0.53Ga0.47As/InP andIn0.53Ga0.47As/In1−xGaxAsyP1−yquantum wells grown by low-pressure metal-organic vapor-phase epitaxy with different interruption cycles
5. Superlattice band structure in the envelope-function approximation
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1. Interface electronic states and boundary conditions for envelope functions;Physical Review B;2002-04-10
2. General boundary conditions for the envelope function in the multibandk⋅pmodel;Physical Review B;2002-02-13
3. Generalization of the effective mass method for semiconductor structures with atomically sharp heterojunctions;Journal of Experimental and Theoretical Physics;1999-11
4. Connection Rules versus Differential Equations for Envelope Functions in Abrupt Heterostructures;Physical Review Letters;1998-04-27
5. Envelope-function method for the conduction band in graded heterostructures;Semiconductor Science and Technology;1997-01-01
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