Electrical properties, microstructure, and thermal stability of Ta-based ohmic contacts annealed at low temperature for GaN HEMTs
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference25 articles.
1. AlGaN/GaN HEMT With 300-GHz $f_{\max}$
2. Transmission electron microscopy assessment of the Si enhancement of Ti∕Al∕Ni∕Au Ohmic contacts to undoped AlGaN∕GaN heterostructures
3. Low resistance Ohmic contacts to n-GaN by Ar plasma and forming gas ambient treatments
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