Effects of an ultrathin Si passivation layer on the interfacial properties of RF-sputtered HfYOxon n-GaAs substrates
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor
2. Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer
3. Quasistatic and high frequency capacitance–voltage characterization of Ga2O3–GaAs structures fabricated by in situ molecular beam epitaxy
4. Metal gate-HfO2 metal-oxide-semiconductor capacitors on n-GaAs substrate with silicon/germanium interfacial passivation layers
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Using Ge-Doped La-Oxynitride as Interfacial Passivation Layer for GaAs Metal-Oxide-Semiconductor Capacitors;IEEE Transactions on Device and Materials Reliability;2016-12
2. The effect of Al2O3 passivation layer in pulsed-laser-deposited ZrO2 films on n-GaAs substrate as a function of post-annealing temperature;Thin Solid Films;2014-05
3. Characteristics of liquid phase deposited SiO2on (NH4)2S-treated GaAs with an ultrathin Si interface passivation layer;Japanese Journal of Applied Physics;2014-04-04
4. Charge trapping and reliability characteristics of ultra-thin HfYOx films on n-GaAs substrates;Microelectronics Reliability;2010-12
5. Impact of the Al/Hf ratio on the electrical properties and band alignments of atomic-layer-deposited HfO2/Al2O3on S-passivated GaAs substrates;Semiconductor Science and Technology;2010-04-09
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