A theoretical study of laser structures based on dilute-nitride InAsN for mid-infrared operation-Reference-Cited by-同舟云学术

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A theoretical study of laser structures based on dilute-nitride InAsN for mid-infrared operation

Published:2009-07-03 Issue:8 Volume:24 Page:085010
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Debbichi M,Ridene S,Bouchriha H,Ben Fredj A,Saïd M,Lazzari J-L,Cuminal Y,Christol P

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. High-power and high-efficiency midwave-infrared interband cascade lasers

2. Room-temperature continuous-wave operation of quantum-cascade lasers at λ∼4μm

3. Room-temperature operation of 3.26μm GaSb-based type-I lasers with quinternary AlGaInAsSb barriers

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of strain on $$\hbox {GaAs}_{1-x-y}\hbox {N}_{x}\hbox {Bi}_{y}/\hbox {GaAs}$$ GaAs 1 - x - y N x Bi y / GaAs to extract the electronic band structure and optical gain by using 16-band $$\varvec{kp}$$ kp Hamiltonian;Bulletin of Materials Science;2019-03-27

2. Calculation of band structure and optical gain of type-II GaSbBi/GaAs quantum wells using 14-band k·p Hamiltonian;Superlattices and Microstructures;2017-09

3. Optical Gain in Type-II InAsN/GaSb Strained Quantum Wells Laser Diodes and Its Pressure Dependence;IEEE Journal of Quantum Electronics;2017

4. Electronic Band Structure and Material Gain of Dilute Nitride Quantum Wells Grown on InP Substrate;IEEE Journal of Quantum Electronics;2015-05

5. Band Structure, Optical Transition, and Optical Gain of Type-II InAs(N)/GaSb Quantum Wells Laser Diodes Modeled Within 16-Band and 14-Band $kp$ Model;IEEE Journal of Quantum Electronics;2015-05

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