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Linearly graded doping drift region: a novel lateral voltage-sustaining layer used for improvement of RESURF LDMOS transistor performances

  • Published:2002-06-18 Issue:7 Volume:17 Page:721-728
  • ISSN:0268-1242
  • Container-title:Semiconductor Science and Technology
  • language:
  • Short-container-title:Semicond. Sci. Technol.

Author:

He Jin,Xi Xuemei,Chan Mansun,Hu Chenming,Li Yingxue,Xing Zhang,Huang Ru

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of Breakdown Voltage Improvement of High-Voltage PLDMOS;2023 China Semiconductor Technology International Conference (CSTIC);2023-06-26

2. Study of Breakdown Voltage Improvement of High-Voltage NLDMOS in Width Direction;2022 China Semiconductor Technology International Conference (CSTIC);2022-06-20

3. A Study on Physically Based Maximum Electric Field Modeling Used for HCI Induced Degradation Characteristic of LDMOS;Applied Mechanics and Materials;2019-02

4. Analysis and Modeling of the Snapback Voltage for Varying Buried Oxide Thickness in SOI-LDMOS Transistors;IEEE Transactions on Electron Devices;2016-10

5. A novel technique at LDMOSs to improve the figure of merit;Superlattices and Microstructures;2016-05
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