Secondary ion mass spectroscopy investigations of magnesium and carbon doped gallium nitride films grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Secondary ion mass spectroscopy investigations of magnesium and carbon doped gallium nitride films grown by molecular beam epitaxy

Published:1998-01-01 Issue:1 Volume:13 Page:71-74
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Ber B Ya,Kudriavtsev Yu A,Merkulov A V,Novikov S V,Lacklison D E,Orton J W,Cheng T S,Foxon C T

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

3. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

4. High-Power GaN P-N Junction Blue-Light-Emitting Diodes

5. GaN Core Relaxation Effects and Their Ramifications for P-Type Doping

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4. Secondary ion mass spectrometry investigation of carbon grain formation in boron nitride epitaxial layers with atomic depth resolution;Journal of Analytical Atomic Spectrometry;2019

5. A-Crater-within-a-Crater Approach for Secondary Ion Mass Spectrometry Evaluation of the Quality of Interfaces of Multilayer Devices;ACS Applied Materials & Interfaces;2018-10-04

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