Quantitative determination of [0 1 0] uniaxial anisotropy and the pinning energy in (Ga,Mn)As films
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/29/i=3/a=035004/pdf
Reference30 articles.
1. A non-volatile-memory device on the basis of engineered anisotropies in (Ga,Mn)As
2. A ten-year perspective on dilute magnetic semiconductors and oxides
3. Proximity Induced Enhancement of the Curie Temperature in Hybrid Spin Injection Devices
4. Enhancing the Curie Temperature of Ferromagnetic Semiconductor (Ga,Mn)As to 200 K via Nanostructure Engineering
5. Antisymmetric magnetoresistance anomalies and magnetic domain structure in GaMnAs/InGaAs layers
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Spin-wave resonance as a tool for probing surface anisotropies in ferromagnetic thin films: Application to the study of (Ga,Mn)As;Surface Science Reports;2017-10
2. Exchange bias field induced symmetry-breaking of magnetization rotation in two-dimension;Applied Physics Letters;2014-10-13
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