Lateral n–i–p junction characterization using laser microscopy-Reference-Cited by-同舟云学术

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Lateral n–i–p junction characterization using laser microscopy

Published:2005-03-05 Issue:5 Volume:20 Page:406-411
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Muscat S,Nash G R,Hall R S,Smith S J,Bartlett C J,Nash K J,Jefferson J H,Buckle L,Emeny M T,Ashley T

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. High-frequency acousto-electric single-photon source

2. Unconditional Security of Quantum Key Distribution over Arbitrarily Long Distances

3. Lateral n–i–p junctions formed in an InSb quantum well by bevel etching

4. Lateralp‐njunction formation in GaAs molecular beam epitaxy by crystal plane dependent doping

5. Focused ion molecular-beam epitaxy – a novel approach to 3D device fabrication using simultaneous p- and n-type doping

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of photocurrent in the two-dimensional n–p–n structure by scanning laser microscope;Journal of Contemporary Physics (Armenian Academy of Sciences);2017-07

2. Lateral light emitting n-i-p diodes in InSb∕AlxIn1−xSb quantum wells;Applied Physics Letters;2006-09-11

3. Photoluminescence from single InSb quantum wells;Applied Physics Letters;2006-02-20

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