A combined EPR and modulated photocurrent study of native defects in Bridgman grown vanadium doped cadmium telluride: the case of the tellurium antisite-Reference-Cited by-同舟云学术

A combined EPR and modulated photocurrent study of native defects in Bridgman grown vanadium doped cadmium telluride: the case of the tellurium antisite

Published:2003-08-11 Issue:11 Volume:18 Page:919-926
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Verstraeten D,Longeaud C,Mahmoud A Ben,Bardeleben H J von,Launay J C,Viraphong O,Lemaire Ph C

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Applications of CdTe. A review

2. Vanadium in CdTe: An electron-paramagnetic-resonance study

3. Electrical and optical characteristics of deep levels in vanadium-doped Cd0.96Zn0.04Te materials by photoinduced current, capacitance, and photocapacitance transient spectroscopies

4. Solution hardening and dislocation density reduction in CdTe crystals by Zn addition

5. Relationship between deep levels in vanadium-doped CdTe and photorefractive effect

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