Modelling of base transit time in Si/Si1 y zGeyCz/Si HBTs and composition profile design issue for its minimization
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. I. Transistor DC design considerations
2. Si/Si/sub 1-x-y/GexCy/Si heterojunction bipolar transistors
3. Direct optical measurement of the valence band offset of p+ Si1−x−yGexCy/p− Si(100) by heterojunction internal photoemission
4. Charge transport in strained Si1−yCy and Si1−x−yGexCy alloys on Si(001)
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1. Temperature dependent model for threshold voltage and subthreshold slope of strained-Si channel MOSFETs with a polysilicon gate;Microelectronics Reliability;2014-08
2. Modelling of threshold voltage and subthreshold slope of strained-Si MOSFETs including quantum effects;Semiconductor Science and Technology;2008-08-13
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