Hot electron noise in III-V heterojunction field effect transistors
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/7/i=3B/a=122/pdf
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1. Physical and material science aspects of integrated optoelectronics;SPIE Proceedings;2007-05-06
2. Optimum channel thickness of Al0.3Ga0.7As/In0.25Ga0.75As/GaAs heterostructures for electron transport applications;Journal of Applied Physics;1996-12
3. Low‐frequency noise measurements of AlxGa1−xAs/InyGa1−yAs/GaAs high electron mobility transistors;Journal of Applied Physics;1995-08-15
4. Monte Carlo analysis of the behavior and spatial origin of electronic noise in GaAs MESFET's;IEEE Transactions on Electron Devices;1995-05
5. Thermally activated real‐space‐transfer noise in pseudomorphic high‐electron‐mobility transistors;Journal of Applied Physics;1993-07-15
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