Use of hydrogen etching to remove existing dislocations in GaN epitaxial layers-Reference-Cited by-同舟云学术

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Use of hydrogen etching to remove existing dislocations in GaN epitaxial layers

Published:2015-06-29 Issue:8 Volume:30 Page:085002
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Yeh Yen-Hsien,Chu Chung-Ming,Wu Yin-Hao,Hsu Ying-Chia,Yu Tzu-Yi,Lee Wei-I

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/30/i=8/a=085002/pdf

Reference25 articles.

1. GaN Substrates—Progress, Status, and Prospects

2. Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)

3. Lateral epitaxy and dislocation density reduction in selectively grown GaN structures

4. Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films

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1. Research on the scale of pedestrian space in underground shopping streets based on VR experiment;Journal of Asian Architecture and Building Engineering;2020-06-26

2. Influence of in-situ deposited SiNx interlayer on crystal quality of GaN epitaxial films;Superlattices and Microstructures;2018-05

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