Thermal stability of HfOxNygate dielectrics on p-GaAs substrates-Reference-Cited by-同舟云学术

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Thermal stability of HfOxNygate dielectrics on p-GaAs substrates

Published:2010-11-16 Issue:12 Volume:25 Page:125009
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Das T,Mahata C,Dalapati G K,Chi D Z,Sutradhar G,Bose P K,Chia C K,Chiam S Y,Pan J S,Zhang Z,Maiti C K

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference34 articles.

1. The advanced unified defect model for Schottky barrier formation

2. Enhancement-Mode GaAs MOSFETs With an $\hbox{In}_{0.3} \hbox{Ga}_{0.7}\hbox{As}$ Channel, a Mobility of Over 5000 $ \hbox{cm}^{2}/\hbox{V} \cdot \hbox{s}$, and Transconductance of Over 475 $\mu\hbox{S}/\mu\hbox{m}$

3. GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

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3. NTC thin film temperature sensors for cryogenics region with high sensitivity and thermal stability;Applied Physics Letters;2018-09-24

4. Modulation of interfacial and electrical properties of HfGdO/GaAs gate stacks by ammonium sulfide passivation and rapid thermal annealing;Journal of Alloys and Compounds;2017-05

5. Effects of constant voltage stressing on HfTaOx/SiGe gate stack;16th International Workshop on Physics of Semiconductor Devices;2012-10-15

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