Cryogenic operation of a 24 GHz MMIC SiGe HBT medium power amplifier-Reference-Cited by-同舟云学术

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Cryogenic operation of a 24 GHz MMIC SiGe HBT medium power amplifier

Published:2010-11-03 Issue:12 Volume:25 Page:125002
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Qin Guoxuan,Jiang Ningyue,Seo Jung-Hun,Cho Namki,Ponchak George E,van der Weide Daniel,Ma Pingxi,Stetson Scott,Racanelli Marco,Ma Zhenqiang

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. SiGe Heterojunction Bipolar Transistors and Circuits Toward Terahertz Communication Applications

2. A 21-26-GHz SiGe bipolar power amplifier MMIC

3. A Wideband 77-GHz, 17.5-dBm Fully Integrated Power Amplifier in Silicon

4. SiGe bipolar transceiver circuits operating at 60 GHz

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Deep Reinforcement Learning on FPGA for Self-Healing Cryogenic Power Amplifier Control;IEEE Open Journal of Circuits and Systems;2023

2. On the Cryogenic RF Linearity of SiGe HBTs in a Fourth-Generation 90-nm SiGe BiCMOS Technology;IEEE Transactions on Electron Devices;2015-04

3. EXPERIMENTAL CHARACTERIZATION OF PROTON RADIATED SiGe POWER HBTs AT EXTREME TEMPERATURES;Journal of Circuits, Systems and Computers;2013-12

4. On the configuration- and frequency-dependent linearity characteristics of SiGe HBTs under different impedance matching conditions;Microelectronics Reliability;2013-03

5. RF characteristics of proton radiated large-area SiGe HBTs at extreme temperatures;Microelectronics Reliability;2012-11

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