On the Cryogenic RF Linearity of SiGe HBTs in a Fourth-Generation 90-nm SiGe BiCMOS Technology-Reference-Cited by-同舟云学术

On the Cryogenic RF Linearity of SiGe HBTs in a Fourth-Generation 90-nm SiGe BiCMOS Technology

Published:2015-04 Issue:4 Volume:62 Page:1127-1135
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Cardoso Adilson S.,Omprakash Anup P.,Chakraborty Partha Sarathi,Karaulac Nedeljko,Fleischhauer David M.,Ildefonso Adrian,Zeinolabedinzadeh Saeed,Oakley Michael A.,Bantu Tikurete G.,Lourenco Nelson E.,Cressler John D.

Funder

Defense Threat Reduction Agency

IBM, Armonk, NY, USA

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7064683/07050347.pdf?arnumber=7050347

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance Degradation Investigation for a GaAs PHEMT High Gain MMIC PA Taking into Account the Temperature;Electronics;2022-05-24

2. Cryogenic Characterization of RF Low-Noise Amplifiers Utilizing Inverse-Mode SiGe HBTs for Extreme Environment Applications;IEEE Transactions on Device and Materials Reliability;2018-12

3. Electronics and Packaging Intended for Emerging Harsh Environment Applications: A Review;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2018-10

4. An Investigation of the Use of Inverse-Mode SiGe HBTs as Switching Pairs for SET-Mitigated RF Mixers;IEEE Transactions on Nuclear Science;2016-04

5. Optimization of SiGe HBT RF Switches for Single-Event Transient Mitigation;IEEE Transactions on Nuclear Science;2015-12