Hot carrier degradation in MOSFETs: a charge pumping study
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/8/i=4/a=012/pdf
Reference24 articles.
1. An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes
2. The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique
3. Determination of interface and bulk‐trap states of IGFET’s using deep‐level transient spectroscopy
4. Experimental results on fast surface states and 1/f noise in m.o.s. transistors
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