Behavior of substrate enhanced electron injection in advanced deep sub-micron NMOSFETs-Reference-Cited by-同舟云学术

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Behavior of substrate enhanced electron injection in advanced deep sub-micron NMOSFETs

Published:2008-03 Issue:3 Volume:85 Page:493-499
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Wang Q.X.,Sun L.X.,Yap A.,Zhang Y.J.,Li H.,Liu S.H.,Zou S.C.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Hot-carrier reliability study of second and first impact ionization degradation in 0.15-μm channel-length N-MOSFETS

2. Secondary impact ionization and device aging in deep submicron MOS devices with various transistor architectures

3. Embedded HIMOS(R) flash memory in 0.35 μm and 0.25 μm CMOS technologies

4. A better understanding of substrate enhanced gate current in VLSI MOSFETs and flash cells. II. Physical analysis

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