Electrical and low frequency noise properties of Gd and GdCo silicide contacts on n-type Si-Reference-Cited by-同舟云学术

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Electrical and low frequency noise properties of Gd and GdCo silicide contacts on n-type Si

Published:2000-06-23 Issue:7 Volume:15 Page:653-657
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Dózsa L,Horváth Zs J,Molnár G L,Petõ G,Dimitriadis C A,Papadimitriou L,Brini J,Kamarinos G

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Contact reaction between Si and rare earth metals

2. Low Schottky barrier of rare‐earth silicide onn‐Si

3. Effect of crystallization on the electrical and interface characteristics of GdSi2/p-Si Schottky junctions

4. Cobalt silicide layers on Si. I. Structure and growth

5. Thermal stability and growth kinetics of Co2Si and CoSi in thin‐film reactions

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Au and non-Au based rare earth metal-silicide ohmic contacts to p-InGaAs;Solid-State Electronics;2011-07

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