Effect of crystallization on the electrical and interface characteristics of GdSi2/p-Si Schottky junctions
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference29 articles.
1. Correlation of Schottky-Barrier Height and Microstructure in the Epitaxial Ni Silicide on Si(111)
2. Schottky-barrier heights of single-crystalNiSi2on Si(111): The effect of a surfacep-njunction
3. Schottky Barrier and Electronic States at Silicide-Silicon Interfaces
4. Fermi-level pinning at nickel disilicide–silicon interface
5. Schottky-barrier inhomogeneity at epitaxialNiSi2interfaces on Si(100)
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1. Some comments on the determination and interpretation of barrier heights of metal–semiconductor contacts;Applied Physics A;2007-03-13
2. Thickness dependent formation and properties of GdSi2/Si(100) interfaces;Applied Physics A;2005-10
3. Formation of epitaxial erbium–silicide islands on Si(001);Surface Science;2005-03
4. Modification of Al/Si interface and Schottky barrier height with chemical treatment;Applied Surface Science;2002-05
5. Passivation of Al/Si Interface by Chemical Treatment: Schottky Barrier Height and Plasma Etch Induced Defects;Solid State Phenomena;2001-11
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