Design, processing and characterization of delta-doped channel AlGaAs/InGaAs/GaAs HFETs-Reference-Cited by-同舟云学术

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Design, processing and characterization of delta-doped channel AlGaAs/InGaAs/GaAs HFETs

Published:2000-06-23 Issue:7 Volume:15 Page:728-735
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Nawaz M,Miranda J M,Sakalas P,Wang S M,Zhao Q X,Willander M,Zirath H

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Comparison of GaAs, InGaAs, and GaAs/InGaAs Doped Channel Field-Effect Transistors with AlGaAs Insulator Gate

2. AlGaAs/InGaAs/GaAs quantum well doped channel heterostructure field effect transistors

3. Fabrication of High Breakdown Pseudomorphic Modulation Doped Field Effect Transistors Using Double Dry Etched Gate Recess Technology in Combination with E-Beam T-Gate Lithography

4. Al/sub 0.3/Ga/sub 0.7/As/In/sub x/Ga/sub 1-x/As (0≤x≤0.25) doped-channel field-effect transistors (DCFET's)

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-performance Ge/GaAs heterojunction tunneling FET with a channel engineering for sub-0.5 V operation;Semiconductor Science and Technology;2015-03-01

2. Reduction of skin effect losses in double-level-T-gate structure;Applied Physics Letters;2014-12-08

3. Simulation for silicon-compatible InGaAs-based junctionless field-effect transistor using InP buffer layer;Semiconductor Science and Technology;2013-08-09

4. Scattering and electron mobility in combination-doped HFET-structures AlGaAs/InGaAs/AlGaAs with high electron density;Semiconductors;2011-10

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