Voltage-tunable two-colour quantum well infrared detector with Al-graded triangular confinement barriers-Reference-Cited by-同舟云学术

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Voltage-tunable two-colour quantum well infrared detector with Al-graded triangular confinement barriers

Published:2001-03-14 Issue:5 Volume:16 Page:285-288
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Guzmán A,Sánchez-Rojas J L,Tijero J M G,Hernando J,Calleja E,Muñoz E,Vergara G,Almazán R,Sánchez F J,Verdú M,Montojo M T

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Comparison of the performance of quantum well and conventional bulk infrared photodetectors

2. Growth and characterization of a bound-to-quasi-continuum QWIP with Al-graded triangular confinement barriers

3. A voltage‐controlled tunable two‐color infrared photodetector using GaAs/AlAs/GaAlAs and GaAs/GaAlAs stacked multiquantum wells

4. Influences of MBE growth processes on photovoltaic 3-5 /spl mu/m intersubband photodetectors

5. Intersubband transitions in single AlGaAs/GaAs quantum wells studied by Fourier transform infrared spectroscopy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Correlation between the performance of double-barrier quantum-well infrared photodetectors and their microstructure: On the origin of the photovoltaic effect;Journal of Applied Physics;2005-08-15

2. Modulation-doped double-barrier quantum well infrared detectors for photovoltaic operation in 3-5 μm;IEEE Photonics Technology Letters;2003-01

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