Optical and structural properties of self-organized InGaAsN/GaAs nanostructures-Reference-Cited by-同舟云学术

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Optical and structural properties of self-organized InGaAsN/GaAs nanostructures

Published:2001-02-15 Issue:3 Volume:16 Page:186-190
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Volovik B V,Kovsh A R,Passenberg W,Kuenzel H,Grote N,Cherkashin N A,Musikhin Yu G,Ledentsov N N,Bimberg D,Ustinov V M

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. 1.3 [micro sign]m GaAs-based laser using quantum dots obtained by activated spinodal decomposition

2. High-temperature characteristic in 1.3-/spl mu/m-range highly strained GaInNAs ridge stripe lasers grown by metal-organic chemical vapor deposition

3. InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 [micro sign]m

4. Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 [micro sign]m

5. High power CW operation of InGaAsN lasers at 1.3 [micro sign]m

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3. Effects of growth temperature on nitrogen incorporation into InGaPN epilayer and its optical properties;Ceramics International;2014-01

4. Optical properties of InGaPN epilayer with low nitrogen content grown by molecular beam epitaxy;Journal of Applied Physics;2012-09-15

5. Growth and photoluminescence properties of TlInGaAsN/TlGaAsN triple quantum wells;Journal of Applied Physics;2010-09

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