Growth and photoluminescence properties of TlInGaAsN/TlGaAsN triple quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3481029
Reference31 articles.
1. Narrow Gap Semiconductors
2. Observation of Small Temperature Variation of Longitudinal-Mode Peak Wavelength in TlInGaAs/InP Laser Diodes
3. Gas Source Molecular Beam Epitaxy Growth of TlInGaAs Layers on GaAs Substrates
4. Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Temperature-Insensitive Band-Gap III-V Semiconductors: Tl-III-V and III-V-Bi;Springer Handbook of Electronic and Photonic Materials;2017
2. Study on nitrogen-induced defects formation and annealing effects in TlInGaAsN alloysystem;Journal of Crystal Growth;2013-04
3. Optical properties of InGaPN epilayer with low nitrogen content grown by molecular beam epitaxy;Journal of Applied Physics;2012-09-15
4. An approach to temperature-insensitive band gap - The InGaGdN case;physica status solidi (b);2012-01-20
5. X-ray photoelectron spectroscopy analysis of TlInGaAsN semiconductor system and their annealing-induced structural changes;Journal of Applied Physics;2010-12-15
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